G4PH4OUD2-E

Description

The G4PH4OUD2-E from Omron is a high-performance insulated-gate bipolar transistor (IGBT) paired with an integrated ultrafast recovery diode, housed in a TO-247 form factor. This design streamlines high-efficiency power switching by minimizing external components and simplifying thermal management. Engineered for demanding environments, the module provides fast switching with low losses and high durability—making it well-suited for use in power supplies, inverters, motor drives, and other applications that demand effective control of high current and voltage.

Key Features

• IGBT plus ultrafast recovery diode in one compact TO-247 package

• Optimized for efficient switching and power loss reduction

• Suitable for a range of high-voltage and high-current power conversions

• Simplifies design by combining switching and diode functions in a single module

• Durable package with effective thermal dissipation for enhanced reliability