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DALLAS DS1230Y-100
$30.00
A robust 256 Kbit (32K × 8) non-volatile SRAM module that combines high-speed SRAM with an internal lithium-backed power fail safeguard, delivering reliable data retention without requiring external support circuitry.
Description
The Dallas DS1230Y-100 is a smart, non-volatile SRAM designed for seamless integration into legacy and modern electronic systems. Housed in a standard 28-pin DIP, it delivers 256 Kbit of fully static SRAM and features a self-contained lithium backup system that monitors the power supply. On detecting a power failure, the DS1230Y-100 automatically write-protects memory and switches to battery power to preserve data. Following power restoration, operation continues seamlessly without loss of information. With no practical limit on write cycles, byte-wide clock access, and compatibility with EEPROM or SRAM sockets, it’s a reliable, plug-and-play memory solution.
Key Features
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256 Kbit SRAM arranged as 32K × 8 (non-volatile)
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Lithium-backed data retention with automatic power-fail monitoring
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Fast access time: up to 100 ns
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Unlimited write cycles, no external backup needed
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JEDEC-standard 28-pin DIP package, compatible with SRAM/EEPROM pinouts
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Ideal for embedded systems, real-time data logging, and power-loss scenarios
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