DALLAS DS1225Y-200+

Description

The DS1225Y-200+ is a compact and efficient memory module that blends 8 KB of SRAM with built-in lithium power-fail circuitry. Housed in a standard 28-pin DIP format, it continuously monitors the supply voltage (VCC). If a drop is detected, it automatically write-protects the memory and switches to its internal lithium source to preserve data. Once power is restored, normal operation resumes without data loss. With no practical limit on write cycles and no need for external support circuits, the DS1225Y-200+ is a reliable drop-in replacement for standard SRAM chips—ideal for timekeeping, data logging, and embedded systems requiring persistent memory. Its 200 ns access time delivers quick and consistent read/write operations.

Key Features

• 64 Kbit (8K × 8) non-volatile SRAM

• Live data retention via internal lithium power supply during power loss

• Standard 28-pin DIP package, footprint compatible with 8K × 8 SRAM and EPROMs

• Unlimited write cycles—robust and durable memory solution

• Fast access time: 200 ns

• Automatic power-fail detection and seamless switching to backup power

• No additional external support circuitry required

• Compact, reliable, and ideal for embedded or legacy systems